MoS2 Wafer-Scale Deposition: Japan's NIMS Breakthrough Paves Way for Sub-1nm Transistors
NIMS and University of Tokyo researchers have developed a revolutionary wafer-scale deposition technology for next-generation semiconductor material MoS2 (molybdenum disulfide). By discovering two key growth mechanisms, self-alignment and self-limiting, they achieved uniform, high-quality monolayer films across entire 2-inch wafers. This breakthrough opens the path to post-silicon semiconductors for sub-1nm node transistors.